| PART |
Description |
Maker |
| 1014-6A |
1000-1400 MHz, 28V, Class C, Common Base; fO (MHz): 1400; P(out) (W): 6; P(in) (W): 1.2; Gain (dB): 7; Vcc (V): 28; Cob (pF): 3.5; Case Style: 55LV-1 L BAND, Si, NPN, RF POWER TRANSISTOR
6 Watts - 28 Volts, Class C Microwave 1000 - 1400 MHz
|
Microsemi, Corp.
Microsemi Corporation
|
| CM300HA-28H |
Single IGBTMOD 300 Amperes/1400 Volts 300 A, 1400 V, N-CHANNEL IGBT
|
Powerex, Inc.
Powerex Power Semiconductors
|
| DD89N14K |
89 A, 1400 V, SILICON, RECTIFIER DIODE
|
INFINEON TECHNOLOGIES AG
|
| CG2 |
2 A, 1400 V, SILICON, RECTIFIER DIODE, DO-204AP
|
VISHAY SEMICONDUCTORS
|
| CGP20 |
2 A, 1400 V, SILICON, RECTIFIER DIODE, DO-204AC
|
GENERAL SEMICONDUCTOR INC
|
| GI1-1400GP/4E GI1-1400GP/74 |
1 A, 1400 V, SILICON, SIGNAL DIODE, DO-204AC
|
VISHAY SEMICONDUCTORS
|
| 1214-30 |
30 W, 28 V, 1200-1400 MHz common base transistor
30 Watts, 28 Volts, Pulsed Radar 1200 - 1400 MHz
BJT
|
GHZTECH[GHz Technology]
|
| 1014-12 |
12 W, 28 V, 1000-1400 MHz common base transistor
12 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz
L BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
List of Unclassifed Manufacturers
ETC[ETC]
|
| MF70-1600 MF70 MF70-1200 MF70-1400 |
Fast Recovery Diode 70 A, 1400 V, SILICON, RECTIFIER DIODE, DO-5
|
Dynex Semiconductor, Ltd.
Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
|
| 1214-370V |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 370; P(in) (W): 50; Gain (dB): 8.7; Vcc (V): 50; Pulse Width (µsec): 330; Duty Cycle (%): 10; Case Style: 55ST-1 RF POWER TRANSISTOR
370 Watts - 50 Volts, 330 μs, 10% Radar 1200 - 1400 MHz
|
STMicroelectronics N.V.
Microsemi Corporation
|
| 1214-300M |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
Microsemi, Corp.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
|
